Abstract:
To increasing demand on power by silicon operating at higher frequencies, voltage droops in
buses at switching transients can b e a critical constraint. On-die decoupling i s used to
the droops and achieve higher performance. In this thesis we perform an analysis of high
frequency decoupling capacitor design using low loss tangent high-k material as dielectric. These
can be used effectively at higher frequencies and can able to compensate the voltage
to ensure the constant power delivery . We also consider the performance degradation of decoupling capacitor at high frequency . It is noted that dielectric material effective
pacitance reduces above several GHz due to the degradation of the dielectric constant. Below
frequencies it is demonstrated that decoupling capacitors have better performance at high
frequency if the high-k material has lower loss tangent. For this reason we choose lower loss agent high-k material to design the decoupling capacitor and placed them closer to CMOS
circuits. Our analysis is done on the basis of simulation result done using the ADS software
which is briefly discussed inside this paper.
Description:
This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrical and Electronic Engineering of East West University, Dhaka, Bangladesh.