http://dspace.ewubd.edu:8080/handle/123456789/1348 Sun, 05 Apr 2026 23:29:19 GMT 2026-04-05T23:29:19Z http://dspace.ewubd.edu:8080/handle/2525/2736 Power Generarion, Transmission, Distribution and Protection System Equipments of Siddhirganj 2×120 MW Peaking Power Plant Islam, Md. Shamiul; Sarkar, Mithun; Asif, Abdullah Al We did our internship at Siddhirganj 2×120 MW Peaking Power Plant located at Siddhirganj, Narayanganj on the bank of the river Shitalakkha from 23th August to 20th September 2014 and this internship report is the result of those 15 days attachment. Our duration of internship period was divided into four sections: generation, instrumentation and control (I&C), mechanical and electrical. During our internship period we gathered practical experiences over the topics related to power generation, switchgear protection and power distribution which we have learned inside the class room or from books. In this report we have focused on the processes which are used in Siddhirganj 2×120 MW Peaking Power Plant. For power generation, natural gas is used in Siddhirganj 2×120 MW Peaking Power Plant. With the help of the plant engineers we observed the control room, protective equipments such as relays, circuit breakers. We acquired knowledge about various types of transformers, isolators, circuit breakers, lightning arresters, current transformers, potential transformers and other equipments of the power station, the details of which are described in the text. This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrical and Electronic Engineering of East West University, Dhaka, Bangladesh. Tue, 01 Jan 0004 00:00:00 GMT http://dspace.ewubd.edu:8080/handle/2525/2736 0004-01-01T00:00:00Z http://dspace.ewubd.edu:8080/handle/2525/2735 Analytical Modeling of Silicon Nanowire Transistor - Effect of Width Variation Ahmed, Rokhsana; Mahmud, Ruhana Parvin The effect of width variation of a Silicon nanowire MOSFET is studied in this work. We considered a ballistic gate-all-around Silicon nanowire MOSFET. The eigen energies of the time independent Schrodinger’s equation were found by solving the Bessel’s function. The eigen energies were used to find the drain current. We have used an analytical compact model to calculate the drain current. The effect of width variation on the drain current, transfer characteristics, transconductance, subthreshold swing, saturation current and saturation current density of the device are investigated. According to our observation the subthreshold swing decreases and the peak of transconductance increases as the wire widens. Saturation current increases with increase in width. Increase in saturation current density with decrease in wire width is an important motivation for choosing narrow wires in MOSFETs. This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrical and Electronic Engineering of East West University, Dhaka, Bangladesh. Thu, 01 Jan 0005 00:00:00 GMT http://dspace.ewubd.edu:8080/handle/2525/2735 0005-01-01T00:00:00Z http://dspace.ewubd.edu:8080/handle/2525/2734 Off-line Recognition of Handwritten Bangla Vowels using Artificial Neural Network Rahman, Rejwana; Hasan, Mahmudul Recognizing handwritten characters is a major challenge in the field of pattern recognition. A unique solution is difficult to find because of the high variability in the samples. Although a lot of research is going on to identify Bangla handwritten characters, the developed methods cannot be universally applied due to the lack of a central database. Each researcher has to manage their own data, which creates non-uniform results. Artificial Neural Network (ANN) is a well-established method in the field of pattern recognition for recognizing handwritten character. Various ANNs have been developed to identify handwritten characters in different languages. Here, we use ANN with back propagation learning algorithm to classify Bangla vowels. The data used to identify the characters was collected by us and was fed to the neural network after preprocessing.Using the pixel values as data, the best result obtained was 68.9% recognition rate for 16 hidden layers, which is quite poor. To improve the results, we used a Gabor filter to extract directional features from the character images. With the feature data, the best result obtained was for 207 hidden layers, which is 79.4%. Finally, the drawbacks and future works are briefly discussed. This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrical and Electronic Engineering of East West University, Dhaka, Bangladesh. Sat, 01 Jan 0001 00:00:00 GMT http://dspace.ewubd.edu:8080/handle/2525/2734 0001-01-01T00:00:00Z http://dspace.ewubd.edu:8080/handle/2525/2733 Sensitivity Investigation of Backgated Silicon Nanowire Biosensors for Liquid Gatting Khan, MD. Jakaria Yusuf; Rahman, Md. Shafquatur; Hasan, Mehedi We performed a feasibility study of tailoring sensitivity of Si nanowire through backgate bias arrangement for various NW length and thickness. Three different thicknesses of 100 nm, 50 nm and 25 nm were chosen and each thickness consisted of 5 different channel lengths - 1000 nm, 750 nm, 500 nm, 250 nm and 100 nm respectively. It can be seen that the backgate bias has a big influence on the sensitivity of a p-type SiNW. A backgate bias leading to a depletion of the NW body increases the sensitivity whereas the backgate bias leading to an accumulation of significant carriers decreases the sensitivity of NW. For a fixed NW thickness, a decrease of NW length found to degrade sub-threshold slope and hence NW sensitivity. But for a fixed NW length a decrease of NW thickness improves the sub-threshold characteristics and sensitivity. When the NW thickness is 100 nm a peak sensitivity of 2390%/v is found for 1um long NW which degrades to a value of 349%/V at 100nm length. However, 100 nm long NW’s sensitivity can be improved by reducing NW thickness and adjusting backgate bias. A 100 nm long 25 nm thick NW exhibits an improved sensitivity of 2730%/V with +7V of backgate bias. This result implies that with appropriate backgate bias arrangement, low doped then NW can be used for single molecule detection as biosensors. Our simulation revealed that a 25 nm thick 1 um long NW with +7V of backgate bias gives a sensitivity of 3050 %/V. This thesis submitted in partial fulfillment of the requirements for the degree of B.Sc in Electrical and Electronic Engineering of East West University, Dhaka, Bangladesh. Tue, 01 Jan 0009 00:00:00 GMT http://dspace.ewubd.edu:8080/handle/2525/2733 0009-01-01T00:00:00Z